Microstructuring and doping of silicon with nanosecond laser pulses

被引：19

作者：

Li, Xiaohong ^{[1
]}

Chang, Liyang ^{[1
]}

Qiu, Rong ^{[1
]}

Wen, Cai ^{[1
]}

Li, Zhihui ^{[2
]}

Hu, Sifu ^{[1
]}

机构：

[1] SW Univ Sci & Technol, Sch Sci, Lab Extreme Condit Matter Properties, Mianyang 621010, Peoples R China

[2] Inst High Energy Phys CAS, Accelerator Ctr, Beijing 100049, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 20期

基金：

中国国家自然科学基金;

关键词：

Silicon; Nanosecond laser pulse; Microstructuring; Doping; Optical properties; Electronic properties; FEMTOSECOND-LASER; ABLATION; ABSORPTION; EFFICIENCY;

D O I：

10.1016/j.apsusc.2012.04.155

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We microstructure and dope silicon surfaces in SF6 atmosphere using nanosecond Nd:YAG laser pulses. The effects of scanning speed and laser pulse energy on surface morphology, optical and electronic properties of laser treated silicon are studied. When the scanning speed is 0.2 mm/s and the laser energy is 290 mJ, the absorptance of microstructured silicon can reach 90% in the visible spectrum and 80% in the infrared spectrum. In addition, its Hall mobility is measured as about 600 cm(2) V-1 s(-1). The electron diffraction shows that the irradiated silicon surface is crystalline and no disordered surface layer is found, which is good for optoelectronic applications. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：8002 / 8007

页数：6

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