New insights on the charging and discharging of electron traps created by homogeneous electron injection in gate oxide

被引：0
|
作者：
Auriel, G [1 ]
Dubuc, JP [1 ]
Sagnes, B [1 ]
Oualid, J [1 ]
Vuillaume, D [1 ]
机构：
[1] IEMN,UMR 9929,CNRS,F-59652 VILLENEUVE DASCQ,FRANCE
来源：
MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(97)00070-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we give some insights on the charging and discharging properties of electron traps created in gate oxide by homogeneous electron injection with the aim at further relating them to breakdown. We present a new procedure for determining the electrical properties of these traps. A model based on trap to band tunneling gives an estimation of their energy levels in the oxide gap.
引用
收藏
页码：309 / 312
页数：4
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