60 GHz CMOS Wideband Differential Driving Amplifier Using Multi-Section Coupled Lines

被引:4
|
作者
Zhang, Haiwei [1 ]
Xue, Quan [2 ,3 ]
机构
[1] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Elect Engn, State Key Lab Millimeter Waves, Hong Kong, Peoples R China
[3] City Univ Hong Kong, CityU Shenzhen Res Inst, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
CMOS amplifier; impedance transforming network; multi-section coupled lines (MSCL); 60; GHz; 65-NM CMOS; LNA;
D O I
10.1109/LMWC.2015.2451367
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a 60 GHz wideband differential driving amplifier based on multi-section coupled lines (MSCL) matching network for the first time. The impedance transforming of the proposed two-port matching network is realized in a single structure. It is suitable for millimeter wave CMOS integrated circuit design since the proposed matching network eliminates the self-resonant and defected-ground problems which exist in the traditional transformer or inductor based matching networks. It provides an inherent DC-block function and is compact in size compared with the conventional transmission line based matching technique. Using the proposed network, a differential amplifier in 65 nm CMOS is designed, measured and discussed. Wideband and high gain performance is achieved.
引用
收藏
页码:600 / 602
页数:3
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