Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application

被引：132
|
作者：
Zhou, Xilin [1 ,2 ,3 ]
Wu, Liangcai [1 ,2 ]
Song, Zhitang [1 ,2 ]
Rao, Feng [1 ,2 ]
Zhu, Min [1 ,2 ,3 ]
Peng, Cheng [1 ,2 ]
Yao, Dongning [1 ,2 ]
Song, Sannian [1 ,2 ]
Liu, Bo [1 ,2 ]
Feng, Songlin [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China
[3] Chinese Acad Sci, Grad Univ, Beijing 100080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期
基金：
中国国家自然科学基金;
关键词：
RESISTANCE MEASUREMENTS; TRANSITION;
D O I：
10.1063/1.4757137
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carbon-doped Ge2Sb2Te5 material is proposed for high-density phase-change memories. The carbon doping effects on electrical and structural properties of Ge2Sb2Te5 are studied by in situ resistance and x-ray diffraction measurements as well as optical spectroscopy. C atoms are found to significantly enhance the thermal stability of amorphous Ge2Sb2Te5 by increasing the degree of disorder of the amorphous phase. The reversible electrical switching capability of the phase-change memory cells is improved in terms of power consumption with carbon addition. The endurance of similar to 2.1 x 10(4) cycles suggests that C-doped Ge2Sb2Te5 film will be a potential phase-change material for high-density storage application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757137]
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页数：4
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