Effect of device layout on the switching of enhancement mode GaN HEMTs

被引：0
|
作者：
Efthymiou, Loizos [1 ]
Camuso, Gianluca [1 ]
Longobardi, Giorgia [1 ]
Udrea, Florin [1 ]
Chien, Terry [2 ]
Chen, Max [2 ]
Shibib, Ayman [3 ]
Terrill, Kyle [3 ]
机构：
[1] Univ Cambridge, Dept Engn, Cambridge, England
[2] Vishay Gen Semicond, Taipei, Taiwan
[3] Vishay Siliconix, Santa Clara, CA USA
来源：
PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, a comparison of the on-state and switching performance of different die layout configurations of GaN HEMTs is given. Devices with different layout designs are shown to exhibit varying degrees of susceptibility to oscillatory behaviour when switching. This is demonstrated to be related to the level of source inductance and the unbalances of such inductances within the die rather than the package; this behaviour was quantified using a 3D electromagnetic simulation software. SPICE simulations were used to further support these findings.
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页码：220 / 223
页数：4
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