A 1.9 GHZ High Efficiency Class-F SOI CMOS Power Amplifier

被引：0
|
作者：
Cheng, L. [1 ]
Li, P. [1 ]
Mo, T. T. [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Sch Microelect, Ctr Analog RF Integrated Circuits CARFIC, Shanghai 200030, Peoples R China
来源：
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON COMPUTER INFORMATION SYSTEMS AND INDUSTRIAL APPLICATIONS (CISIA 2015) | 2015年 / 18卷
关键词：
power amplifier; class F; SOI; efficiency;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, a 1.9 GHz high efficiency power amplifier (PA) for wireless applications is present. The PA is a two stage class-F power amplifier. The drive stage is self-biased cascode structure and the output stage is common source. The PA is designed and simulated in 0.18 mu m silicon-on-insulator (SOI) technology. The simulation results show that at 1.9 GHz, this class-F PA can achieve 50 % PAE (power added efficiency) at (1dB compression point) output power of 25 dBm and the linear gain is 20 dB.
引用
收藏
页码：247 / 249
页数：3
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