High Power Density EMI Filter Design with Consideration of Self-Parasitic

被引：0
|
作者：
Wang, Ruxi [1 ]
Boroyevich, Dushan [1 ]
Blanchette, Handy Fortin [2 ]
Mattavelli, Paolo [1 ]
机构：
[1] Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
[2] Ecole Technol Superieure, Montreal, PQ, Canada
来源：
2012 TWENTY-SEVENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2012年
关键词：
High power density EMI filter; Self-Pafasitic; Magnetic Shielding; CAPACITANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A compact EMI filter becomes one of the critical issue for a high power density converter design especially in transportation applications. This paper proposed a design procedure for a more compact EMI filter with consideration of both the low frequency and high frequency attenuation requirement. For simplicity purpose, EMI filter transfer gain is utilized to conduct the analysis. With the proposed method, the best stage number and components value can be systematically derived given a fixed operating point.
引用
收藏
页码：2285 / 2289
页数：5
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