Comparative study of self-assembled CdSe/ZnSe quantum dots grown by variants of conventional MBE

The morphology, composition, and optical properties of CdSe/ZnSe quantum dots (QDs), grown by conventional molecular beam epitaxy (NME) and two other variants of the same (low temperature MBE and in-situ annealing), have been compared based on the results of high resolution X-ray diffraction (HRXRD), low temperature micro- and ensemble-photoluminescence (PL), atomic force microscopy (AFM), and Raman spectroscopy (RS) studies. While conventional MBE results in the formation of no discernible QD-like features, by the alternative methods reported here, discrete CdSe QDs, 1.5 to 15 nin high and with a lower density, could be realised. Shape anisotropy of the dots has also been investigated.