Numerical Study on Dual Material Gate Nanowire Tunnel Field-Effect Transistor

被引：0
|
作者：
Zhang, Aixi [1 ,2 ]
Mei, Jinhe [1 ]
Zhang, Lining
He, Hongyu [1 ]
He, Jin [1 ]
Chan, Mansun [2 ]
机构：
[1] Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Hong Kong Inst, Shenzhen, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
来源：
2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC) | 2012年
关键词：
dual-material gate (DMG); single-material gate (SMG); nanowire; tunnel field-effect transistor (TFET); band-to-band tunneling; numerical simulation; TFETS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A numerical study on the characteristics of dualmaterial gate nanowire tunnel field-effect transistor (DMG-NTFET) is presented using 3-D TCAD simulations in this paper. Compared with the single-material gate tunnel field-effect transistor (SMG-NTFET), the numerical simulation results demonstrate that the DMG-NTFET has lower leakage current I-OFF with a negligible loss of I-ON. Moreover, the impact of two gates' work function difference on the DMG-NTFET ON/OFF current ratio, transconductance (G(m)) and DIBL effects is studied, and the effect of control gate length on the I-ON and I-OFF is demonstrated. Finally, the optimization design of the work function difference and the control gate length for the DMG-NTFET is discussed.
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收藏
页数：5
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