A 40-nm CMOS Permittivity Sensor for Chemical/Biological Material Characterization at RF/Microwave Frequencies

被引：0
|
作者：
Vlachogiannakis, Gerasimos [1 ]
Spirito, Marco [1 ]
Pertijs, Michiel A. P. [1 ]
de Vreede, Leo C. N. [1 ]
机构：
[1] Delft Univ Technol, Delft, Netherlands
来源：
2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年
关键词：
Bridge circuits; Chemical and biological sensors; CMOS integrated circuits; Microwave sensors; Permittivity; DIELECTRIC-PROPERTIES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a complex permittivity sensor, integrated in 40-nm CMOS, for microwave dielectric spectroscopy. It utilizes a single-ended patch as a near-field sensing element, embedded in a double-balanced, fully-differential impedance bridge. A low-IF, multi-harmonic down-conversion scheme is employed to extend the characterization frequency range and increase the measurement speed. The implemented architecture is compact, accurate and fast, thus suitable for the realization of future real-time, microwave-based, 2-D dielectric imagers. Measurements on liquids show an rms error of < 1% over a frequency range of 0.1 - 12 GHz.
引用
收藏
页数：4
相关论文
共 26 条
  • [1] A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    Vlachogiannakis, Gerasimos
    Pertijs, Michiel A. P.
    Spirito, Marco
    de Vreede, Leo C. N.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2018, 66 (03) : 1619 - 1634
  • [2] Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS
    Kiene, Gerd
    Ilik, Sadik
    Mastrodomenico, Luigi
    Babaie, Masoud
    Sebastiano, Fabio
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2024, 12 : 573 - 580
  • [3] Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
    Zeng, Yan
    Li, Xiao-Jin
    Qing, Jian
    Sun, Ya-Bin
    Shi, Yan-Ling
    Guo, Ao
    Hu, Shao-Jian
    CHINESE PHYSICS B, 2017, 26 (10)
  • [4] Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
    曾严
    李小进
    卿健
    孙亚宾
    石艳玲
    郭奥
    胡少坚
    Chinese Physics B, 2017, 26 (10) : 487 - 493
  • [5] On-Chip HBM and HMM ESD Protection Design for RF Applications in 40-nm CMOS Process
    Chen, Jie-Ting
    Lin, Chun-Yu
    Chang, Rong-Kun
    Ker, Ming-Dou
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (12) : 5267 - 5274
  • [6] A 192 x 128 Time Correlated SPAD Image Sensor in 40-nm CMOS Technology
    Henderson, Robert K.
    Johnston, Nick
    Della Rocca, Francescopaolo Mattioli
    Chen, Haochang
    Li, David Day-Uei
    Hungerford, Graham
    Hirsch, Richard
    McLoskey, David
    Yip, Philip
    Birch, David J. S.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2019, 54 (07) : 1907 - 1916
  • [7] A 40-nm CMOS Mixer with 36-GHz IF Bandwidth and 60-148 GHz RF Passband
    Wu, Yi-Ching
    Hwang, Yuh-Jing
    Chiong, Chau-Ching
    Lu, Bo-Ze
    Wang, Huei
    PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, : 57 - 59
  • [8] A 1.0-7.0 GHz Inductorless RF Mixer with Multiple Feedback and Active Load in 40-nm CMOS
    Yan, Xu
    Yang, Lu
    Zhang, Hao
    Zhang, Jili
    Lin, Fujiang
    2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2017, : 187 - 190
  • [9] A Two-Beam Eight-Element Direct Digital Beamforming RF Modulator in 40-nm CMOS
    Zheng, Boyi
    Jie, Lu
    Bell, John
    He, Yan
    Flynn, Michael P.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2019, 67 (07) : 2569 - 2579
  • [10] A BJT-Based Temperature Sensor in 40-nm CMOS With ±0.8°C (3σ) Untrimmed Inaccuracy
    Zhang, Tan-Tan
    Gao, Yuan
    32ND IEEE INTERNATIONAL SYSTEM ON CHIP CONFERENCE (IEEE SOCC 2019), 2019, : 1 - 4
123