Comparative Study of Temperature-Dependent Characteristics for SiC MOSFETs

被引：0
|
作者：
Jiang, Furong [1 ]
Sheng, Kuang [1 ]
Guo, Qing [1 ]
机构：
[1] Zhejiang Univ, 38 Zheda Rd, Hangzhou 310058, Zhejiang, Peoples R China
来源：
2016 13TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS) | 2016年
基金：
美国国家科学基金会;
关键词：
PERFORMANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By studying the electrical performances of SiC MOSFETs for three generations at temperatures from -160 degrees C to 200 degrees C, threshold voltages and on-resistances are extracted at different temperatures, and the temperature dependency of each parameter and the gate bias influences on on-resistances are compared. The comparative evaluation of temperaturedependence of characteristic parameters for three-generation samples is studied. The reason for generational decreased temperature dependency of threshold voltage and on-resistance is that the interface trap density between silicon carbide and oxide is generationally decreased.
引用
收藏
页码：50 / 53
页数：4
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