Differences in the structure composition of microcrystalline silicon solar cells deposited by HWCVD and PECVD:: Influence on open circuit voltage

被引：10
|
作者：
Mai, Y [1 ]
Klein, S
Geng, X
Hülsbeck, M
Carius, R
Finger, F
机构：
[1] Forschungszentrum Julich, Inst Photovolta IPV, D-52425 Julich, Germany
[2] Nankai Univ, Inst Photoelect, Tianjin 300071, Peoples R China
来源：
THIN SOLID FILMS | 2006年 / 501卷 / 1-2期
关键词：
hot-wire chemical vapor deposition; solar cells; PECVD; open circuit voltage;
D O I：
10.1016/j.tsf.2005.07.193
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Structural properties, current-voltage (J-V) characteristics in the dark and under illumination and quantum efficiency are systematically studied and compared for mu c-Si:H solar cells with i-layers deposited by HWCVD or PECVD. A correlation between the increasing V(OC) and decreasing crystalline volume fraction of the i-layer can be observed in solar cells deposited by HWCVD and PECVD. At high crystallinity, similar J-V parameters are obtained for both methods. However, HWCVD solar cells can be prepared with lower crystalline volume fractions below 50%, without the drastic drop of solar performance observed in PECVD solar cells. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：272 / 275
页数：4
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