Demonstration of the p-NiOX/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

We report on achieving high-performance beta-Ga2O3 power devices through the incorporation of the p-type NiOX .beta-Ga2O3 p-n heterojunction (HJ) diodes, as well as the novel p-n HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga's power figure of merit (P-FOM). The HJ p-n diode is introduced to provide a large built-in potential and alleviate the peak electric field to enhance the By. The non-field plated p-n HJ diode and HJ-FET acquire a breakdown voltage (BV)/specific on-resistance (R-on,R-sp) of 1220 V/1.08 m Omega . cm(2) and 1115 V/3.19 m Omega . cm(2), respectively. Therefore, the P-FOM which is defined as the BV2 /R on , sp is yielded to be 1.38 GW/cm(2) and 0.39 GW/cm(2) for p-n HJ diode and HJ-FET, respectively. Due to the hard realization of p-type Ga2O3, these findings show significant insights on the development of Ga2O3 power devices and offer great promises of implementing p-NiOx in boosting the Ga2O3 power device performances.