Early stages of microcrystalline silicon film growth on amorphous substrate with SiH4 gas heating

被引：6
|
作者：
Shirai, H
Arai, T
机构：
[1] Faculty of Engineering, Saitama University, Urawa, Saitama 338
来源：
THIN SOLID FILMS | 1997年 / 296卷 / 1-2期
关键词：
cathode heating technique; crystallinity; amorphous substrate;
D O I：
10.1016/S0040-6090(96)09384-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of SiH4 gas heating has been investigated for the growth of microcrystalline silicon (mu c-Si) thin film by plasma-enhanced chemical vapor deposition (PECVD) and low pressure CVD to improve the crystallinity and inhomogenities at the early stage of growth on amorphous substrate such as SiO2. By using the cathode heating technique, T-c = 550 degrees C, the crystallinity was enhanced from the early stage of growth in the PECVD of SiH4 highly diluted in H-2 at substrate temperature, T-s = 200 degrees C. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：19 / 22
页数：4
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