Optical emission of biaxial ZnO-ZnS nanoribbon heterostructures

被引:39
|
作者
Murphy, M. W. [1 ]
Zhou, X. T. [1 ]
Ko, J. Y. P. [1 ]
Zhou, J. G. [1 ]
Heigl, F. [1 ]
Sham, T. K. [1 ]
机构
[1] Univ Western Ontario, Dept Chem, London, ON N6A 5B7, Canada
来源
JOURNAL OF CHEMICAL PHYSICS | 2009年 / 130卷 / 08期
基金
加拿大自然科学与工程研究理事会;
关键词
II-VI semiconductors; interface states; nanostructured materials; photoluminescence; semiconductor heterojunctions; wide band gap semiconductors; XANES; zinc compounds; RAY-ABSORPTION SPECTROSCOPY; ELECTRONIC-STRUCTURE; POROUS SILICON; LUMINESCENCE; NANOWIRES; NANOSTRUCTURES; PHOTOLUMINESCENCE; NANOPARTICLES; NANOMATERIALS; PHYSICS;
D O I
10.1063/1.3080767
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic structure and optical properties of biaxial ZnO-ZnS heterostructure nanoribbons (NRs) have been investigated using x-ray absorption near-edge structures (XANES) and x-ray excited optical luminescence (XEOL). The XANES were recorded in total electron yield and wavelength-selected photoluminescence yield across the K- and L-3,L-2-edges of zinc and sulfur and the K-edge of oxygen. The XEOL from the NRs exhibit a very weak band-gap emission at 392 nm and two intense defect emissions at 491 and 531 nm. The synchrotron x-ray pulse (similar to 100 ps, 153 ns repetition rate) was used to track the optical decay dynamics from ZnO-ZnS NR, which can be described by two lifetimes (7.6 and 55 ns). Comparison with similar measurements for ZnO and ZnS nanowires reveals that the luminescence from ZnO-ZnS NRs was dominated by the ZnO component of the NR as the ZnS component contributes little. The implication of this observation is discussed.
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页数:8
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