High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

被引：30
|
作者：
Zhang, Jianli [1 ]
Xiong, Chuanbing [1 ]
Liu, Junlin [1 ]
Quan, Zhijue [1 ]
Wang, Li [1 ]
Jiang, Fengyi [1 ]
机构：
[1] Nanchang Univ, Natl Engn Technol Res Ctr LED Si Substrate, Nanchang 330047, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 114卷 / 04期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
QUANTUM-WELLS; GREEN; BLUE;
D O I：
10.1007/s00339-014-8283-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InGaN-based multiple quantum wells (MQWs) yellow light-emitting diodes (LEDs) were grown on Si substrate by metal organic vapor deposition. Blue MQWs were introduced as strain modulation layers for yellow MQWs. The LED chips emitted 72-mW yellow light with 566-nm dominant wavelength and 9.4 % external quantum efficiency (EQE) at 350 mA under room temperature, and it reached a peak EQE of 22.2 % at 0.7 mA. A comparison sample without strain modulation layers exhibited much weaker performance. The results reveal that long-wavelength emission of InGaN system is reliable if the strain of MQWs has been properly modulated.
引用
收藏
页码：1049 / 1053
页数：5
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