Electrothermal IGBT short-circuit behavior: Modeling and experimental results

This paper describes the electrothermal IGBT short-circuit behavior. The modelling of the device has been realized using a physical approach based upon mobility models and general semiconductor equations. Electrothermal simulations of the device during the short-circuit phase brought to the fore several types of possible behavior: come back to equilibrium or breakdown (immediate or delayed) according to the short-circuit duration. This study shows moreover the influence of the different physical parameters (temperature, mobilities, carrier concentrations, lifetimes) on the device behavior during this phase. Short-circuit experimental study has been made with conditions as close as possible to simulation conditions, and eventually until component breakdown. This study allows to determine extreme operating conditions (current, voltage, short-circuit time) and well confirms the simulation results.