Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator:: The role of remote phonon scattering (vol 90, pg 4587, 2001)

被引：2
|
作者：
Fischetti, MV [1 ]
Neumayer, DA [1 ]
Cartier, EA [1 ]
机构：
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 01期
关键词：
D O I：
10.1063/1.1427643
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：546 / 546
页数：1
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