Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2

被引:40
|
作者
Deng, Yazhou [1 ]
Xiang, Ziji [2 ]
Lei, Bin [2 ]
Zhu, Kejia [1 ]
Mu, Haimen [2 ]
Zhuo, Weizhuang [2 ]
Hua, Xiangyu [2 ]
Wang, Mingjie [1 ]
Wang, Zhengfei [2 ]
Wang, Guopeng [1 ]
Tian, Mingliang [1 ,3 ,4 ]
Chen, Xianhui [2 ,4 ,5 ]
机构
[1] Anhui Univ, Sch Phys & Optoelect Engn, Hefei 230601, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China
[3] Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China
[4] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
[5] CAS Ctr Excellence Quantum Informat & Quantum Phy, Hefei 230026, Anhui, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
van der Waals crystals; two-dimensional ferromagnetism; magnetic anisotropy; anomalous Hall effect;
D O I
10.1021/acs.nanolett.2c02696
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeTe2. By studying the magnetoresistance and anomalous Hall effect ( AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular easy-axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.
引用
收藏
页码:9839 / 9846
页数:8
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