Spectral properties of the silver photodoping process in thin As-S-Se layers

被引:9
|
作者
Todorov, R. [1 ]
Lalova, A. [1 ]
Petkov, K. [1 ]
Tasseva, J. [1 ]
机构
[1] Bulgarian Acad Sci, Inst Opt Mat & Technol Acad J Malinowski, BU-1113 Sofia, Bulgaria
关键词
NONLINEAR-OPTICAL PROPERTIES; SOLID-STATE REACTION; AMORPHOUS FILMS; PHOTOINDUCED CHANGES; AG; DISSOLUTION; KINETICS; SEMICONDUCTORS; MECHANISM; DIFFUSION;
D O I
10.1088/0268-1242/27/11/115014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper deals with the optical properties of thin chalcogenide films from the ternary As33S67-xSex system depending on the composition and conditions of illumination using various light sources (white light, monochromatic light with lambda = 481, 514 (Ar+-laser) and 632.8 nm (He-Ne laser), respectively). The spectral dependence of the changes of the optical properties of thin As33S67-xSex layers with thickness d similar to 150-190 nm doped with silver were investigated. The optical constants (refractive index, n and extinction coefficient, k) were calculated applying double TR methods using both measured transmittance, T and reflectance, R spectra. The optical constants of single layers from chalcogenide glass and from silver have been used to calculate the reflectance spectrum of the unexposed As-S-Se/Ag bilayer system. Applying Tauc's law, the optical band gap, E-g and the structural parameter, B, related to the slope of the absorption edge, were determined.
引用
收藏
页数:8
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