As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy

被引：31
|
作者：
Sobiesierski, Z [1 ]
Westwood, DI [1 ]
Parbrook, PJ [1 ]
Ozanyan, KB [1 ]
Hopkinson, M [1 ]
Whitehouse, CR [1 ]
机构：
[1] UNIV SHEFFIELD,DEPT ELECT & ELECT ENGN,IRC SEMICOND MAT,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 11期
关键词：
D O I：
10.1063/1.118595
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Reflectance anisotropy spectroscopy (RAS) has been used to investigate the As/P exchange reaction for group V stabilized InP(001) surfaces exposed to As-2 and/or P-2, under molecular beam epitaxy conditions. By comparing RAS spectra taken before, during, and after As, exposure it is possible to confirm that the As/P exchange reaction is exactly reversible over a range of temperatures from 420 to 560 degrees C. Time-resolved RAS measurements of the reaction rate, monitored at an energy of 2.65 eV, indicate that the activation energy for the exchange is 1.23 +/- 0.05 eV. (C) 1997 American Institute of Physics.
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页码：1423 / 1425
页数：3
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