FTIR and Dielectric Studies of Se90Cd10-xInx Glassy Alloys

被引:5
|
作者
Dwivedi, D. K. [1 ]
Shukla, Nitesh [1 ]
Pathak, H. P. [1 ]
机构
[1] MMM Univ Technol, Amorphous Semicond Res Lab, Dept Phys, Gorakhpur 273010, Uttar Pradesh, India
关键词
Chalcogenide glass; melt quench technique; dielectric properties; impedance spectroscopic technique; CHALCOGENIDE GLASSES; RELAXATION; SYSTEM; TRANSPORT; BEHAVIOR; FILMS; AG;
D O I
10.1016/j.matpr.2015.07.302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chalcogenide glassy alloys of Se90Cd10-xInx (x=2,4,6,8) are synthesized by melt quench technique. The FTIR transmission spectroscopy studies has been carried out in the range 400-4000 cm(-1). In the transmittance curve various absorption bands are seen. Dielectric properties of Se90Cd10-xInx (x=2,4,6,8) chalcogenide glassy system have been studied using impedance spectroscopic technique in the frequency range 42Hz-5MHz at room temperature. It is found that the dielectric constants.' and dielectric loss factor epsilon '' both depends on frequency. Both epsilon' and epsilon '' are found to be decreasing with the In content in Se90Cd10-xInx (x=2,4,6,8) glassy alloys. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2862 / 2867
页数:6
相关论文
共 50 条
  • [1] Dielectric relaxation and AC conductivity studies of Se90Cd10-xInx glassy alloys
    Shukla, Nitesh
    Dwivedi, D. K.
    JOURNAL OF ASIAN CERAMIC SOCIETIES, 2016, 4 (02): : 178 - 184
  • [2] Low temperature studies of the dielectric and electrical parameters of glassy Se90Ge10-xInx
    El-Hassan, SA
    SURFACE REVIEW AND LETTERS, 2002, 9 (3-4) : 1379 - 1385
  • [3] Dielectric relaxation and thermodynamic studies on Se90Ge10-xInx glasses
    ElHassan, SA
    Shash, NM
    MATERIALS CHEMISTRY AND PHYSICS, 1997, 49 (01) : 56 - 61
  • [4] Dielectric Relaxation Studies in Se90Cd8Sb2 Glassy Alloy
    Shukla, Nitesh
    VanditaRao
    Dwivedi, D. K.
    INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015), 2016, 1728
  • [5] ROLE OF Pb ADDITIVE IN THE DIELECTRIC PROPERTIES OF Se90In10 and Se75In25 GLASSY ALLOYS
    Sharma, J.
    Kumar, S.
    JOURNAL OF OVONIC RESEARCH, 2010, 6 (01): : 35 - 44
  • [6] Role of Sb additive in the dielectric properties of Se90In10 and Se75In25 glassy alloys
    Sharma, J.
    Kumar, S.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2011, 14 (02) : 152 - 156
  • [7] Dielectric relaxation in glassy Se90Cd6In4
    Shukla, N.
    Mehta, N.
    Dwivedi, D. K.
    ELECTRONICS LETTERS, 2016, 52 (18) : 1548 - 1549
  • [8] Dielectric relaxation in glassy Se90GexIn10-x
    Choudhary, N
    Goel, DK
    Kumar, A
    INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 2004, 11 (01) : 55 - 58
  • [9] Thermal stability and electrical properties of Se90Ge10-xInx amorphous alloys
    Ghazala, M. S. Abo
    Aboelhasn, E.
    Amar, A. H.
    Gamel, W.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 11-12, 2011, 8 (11-12): : 3095 - 3098
  • [10] CRYSTALLIZATION KINETICS IN GLASSY GE20SE80-XINX ALLOYS
    AGARWAL, P
    GOEL, S
    TRIPATHI, SK
    KUMAR, A
    JOURNAL OF MATERIALS SCIENCE, 1991, 26 (18) : 4924 - 4930