Field-dependent tunneling and population inversion in multiband semiconductor superlattices

被引：4
|
作者：
Kleinert, P
Bryksin, VV
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 11卷 / 04期
关键词：
intersubband transitions; population inversion; tunnelling;
D O I：
10.1016/S1386-9477(01)00167-9
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The quasiclassical description of high-field effects in one-band superlattices is extended to multiband systems. Field-dependent tunneling is taken into account within a density-matrix approach. Analytical results are derived for the field dependence of the carrier redistribution in two- and three-band semiconductor superlattices. Some implications for the design of unipolar mid-infrared lasers are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：332 / 338
页数：7
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