Size dependent polarization reversal at nanoscale metal-ferroelectric interfaces

被引:3
|
作者
Kraya, R. A. [1 ]
Kraya, L. Y. [1 ]
机构
[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
基金
美国国家科学基金会;
关键词
RESISTIVE SWITCHING MEMORIES; PHOTOELECTRON-SPECTROSCOPY; FORCE MICROSCOPY; HYSTERESIS LOOPS; BATIO3; SURFACES; OXIDES; FILM;
D O I
10.1063/1.4769437
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric oxides possess a unique set of physical properties that have not been maximally exploited due to a lack of understanding of the origins of the switching behavior. Currently, controversy exists over whether switching in ferroelectric oxides is due to polarization or defect mediated switching. Here, we use ultra-high vacuum scanning tunneling microscopy and atomic force microscopy to investigate the process of polarization reversal and to assess the effect of the electronic structure and conductance on the switching behavior of single crystal BaTiO3 (001). Measurements of the local density of states revealed the surface switching behavior was initially due to polarization and that a transition occurred to defected mediated switching after repeated switching cycles. Atomic force microscopy investigations of the size effects at nanoscale Au-BaTiO3 (001) interfaces revealed asymmetric polarization reversal at large interfaces with a convergence to symmetric behavior as the size scale decreased, in agreement with the tunneling-based scanning tunneling microscopy technique. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769437]
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Size dependent polarization reversal at nanoscale metal-ferroelectric interfaces (vol 112, 123708, 2012)
    Kraya, R. A.
    Kraya, L. Y.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (07)
  • [3] Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
    Mulaosmanovic, Halid
    Mikolajick, Thomas
    Slesazeck, Stefan
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (28) : 23997 - 24002
  • [4] The influence of polarization on properties of the potential barrier at metal-ferroelectric interface
    Kamenshchikov, Mikhail, V
    Solnyshkin, Alexander, V
    Pronin, Igor P.
    Belov, Alexey N.
    PROCESSING AND APPLICATION OF CERAMICS, 2019, 13 (03) : 277 - 280
  • [5] Domain structure and dielectric properties of metal-ferroelectric superlattices with asymmetric interfaces
    Hadjimichael, Marios
    Li, Yaqi
    Yedra, Lluis
    Dkhil, Brahim
    Zubko, Pavlo
    PHYSICAL REVIEW MATERIALS, 2020, 4 (09):
  • [6] On the effect of spontaneous polarization on the height of the Schottky barrier at the metal-ferroelectric contact
    Yarmarkin, V. K.
    Shul'man, S. G.
    Lemanov, V. V.
    PHYSICS OF THE SOLID STATE, 2013, 55 (03) : 547 - 550
  • [7] On the effect of spontaneous polarization on the height of the Schottky barrier at the metal-ferroelectric contact
    V. K. Yarmarkin
    S. G. Shul’man
    V. V. Lemanov
    Physics of the Solid State, 2013, 55 : 547 - 550
  • [8] Interface phase and tuning of polarization in metal-ferroelectric junctions:: A theoretical study
    Nunez, Matias
    Nardelli, M. Buongiorno
    APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [9] Metal-ferroelectric thin film devices
    Kholkin, AL
    Martins, R
    Aguas, H
    Ferreira, I
    Silva, V
    Smirnova, OA
    Costa, MEV
    Vilarinho, PM
    Fortunato, E
    Baptista, JL
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 1311 - 1315
  • [10] Effect of ferroelectric/metal interface structure on polarization reversal
    Horie, Satoshi
    Ishida, Kenji
    Kuwajima, Shuichiro
    Kobayashi, Kei
    Yamada, Hirofumi
    Matsushge, Kazumi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (02) : 1259 - 1262