Synthesized compact model and experimental results for substrate noise coupling in lightly doped processes

被引：0

作者：

Lan, H ^{[1
]}

Chen, TW ^{[1
]}

Chui, CO ^{[1
]}

Nikaeen, P ^{[1
]}

Kim, JW ^{[1
]}

Dutton, RW ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

CICC: PROCEEDINGS OF THE IEEE 2005 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A synthesized compact model of substrate coupling resistance for lightly doped substrate processes is proposed. The model incorporates all geometrical parameters including geometrical mean distance with a few process-dependent fitting coefficients. The model accuracy is shown to be within 15% error using the measurement data from two test chips, one in a customized lightly doped process and the other one in a 0.18-mu m BiCMOS lightly doped process. Substrate noise distribution on a 2 mm by 2 mm chip with 319 substrate contacts is shown with the calibrated SCM model.

引用

页码：469 / 472

页数：4

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