Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces

被引：18
|
作者：
Hayashi, Y
Yoshinaga, M
Ikeda, H
Zaima, S
Yasuda, Y
机构：
[1] Nagoya Municipal Ind Res Inst, Dept Elect, Atsuta Ku, Nagoya, Aichi 4560058, Japan
[2] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Ctr Cooperat Res Adv Sci & Technol, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
SURFACE SCIENCE | 1999年 / 438卷 / 1-3期
关键词：
CoSi3; epitaxy; oxygen adsorption; scanning tunneling microscopy; Si(001); solid-phase growth;
D O I：
10.1016/S0039-6028(99)00559-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Growth behavior of epitaxial CoSi2(001) films on clean Si(001) surfaces and oxidized Si(001) surfaces with oxygen coverages below 2 ML has been investigated by scanning tunneling microscopy. In the solid-phase epitaxy of 3 ML-thick Co on clean Si surfaces at 530 degrees C, rectangular-shaped CoSi2(001) three-dimensional (3D) islands elongated along the <110) direction were grown on thermally stable two-dimensional layers of CoSi2(001). This fact suggests that the CoSi2/Si(001) epitaxial growth obeys a Stranski-Krastanov-like mode. The shape of 3D islands is considered to be explained by energetics to reduce the surface energy of CoSi2. Moreover, it is found that oxygen atoms act as a kind of surfactant to lower the surface energy of CoSi2. Almost pinhole-free and atomically-hat epitaxial CoSi2(001) films with a thickness of 6 ML can be realized by solid-phase epitaxy under the condition of an annealing temperature of 470 degrees C and oxygen coverages of 1-2 ML. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
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收藏
页码：116 / 122
页数：7
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