Graphene Electronics: Materials, Devices, and Circuits

被引:110
|
作者
Wu, Yanqing [1 ]
Farmer, Damon B. [1 ]
Xia, Fengnian [1 ]
Avouris, Phaedon [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
Current gain; field-effect transistor (FET); graphene analog integrated circuits (ICs); graphene nanoelectronics; power gain; voltage gain; HIGH-FREQUENCY; BERRYS PHASE; LARGE-AREA; TRANSISTORS; TRANSPORT; FILMS; RF; FABRICATION; GRAPHITE; GROWTH;
D O I
10.1109/JPROC.2013.2260311
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Graphene is a 2-D atomic layer of carbon atoms with unique electronic transport properties such as a high Fermi velocity, an outstanding carrier mobility, and a high carrier saturation velocity, which make graphene an excellent candidate for advanced applications in future electronics. In particular, the potential of graphene in high-speed analog electronics is currently being extensively explored. In this paper, we discuss briefly the basic electronic structure and transport properties of graphene, its large scale synthesis, the role of metal-graphene contact, field-effect transistor (FET) device fabrication (including the issues of gate insulators), and then focus on the electrical characteristics and promise of high-frequency graphene transistors with record-high cutoff frequencies, maximum oscillation frequencies, and voltage gain. Finally, we briefly discuss the first graphene integrated circuits (ICs) in the form of mixers and voltage amplifiers.
引用
收藏
页码:1620 / 1637
页数:18
相关论文
共 50 条
  • [1] Oxide bipolar electronics: materials, devices and circuits
    Grundmann, Marius
    Klupfel, Fabian
    Karsthof, Robert
    Schlupp, Peter
    Schein, Friedrich-Leonhard
    Splith, Daniel
    Yang, Chang
    Bitter, Sofie
    von Wenckstern, Holger
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (21)
  • [2] ELECTRONICS - CIRCUITS AND DEVICES
    LEWIS, HZ
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (05): : 558 - &
  • [3] Carbon Nanotube Electronics - Materials, Devices, Circuits, Design, Modeling, and Performance Projection
    Wong, H. -S. Philip
    Mitra, Subhasish
    Akinwande, Deji
    Beasley, Cara
    Chai, Yang
    Chen, Hong-Yu
    Chen, Xiangyu
    Close, Gael
    Deng, Jie
    Hazeghi, Arash
    Liang, Jiale
    Lin, Albert
    Liyanage, Luckshitha S.
    Luo, Jieying
    Parker, Jason
    Patil, Nishant
    Shulaker, Max
    Wei, Hai
    Wei, Lan
    Zhang, Jie
    2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
  • [4] Molecular electronics - Devices and circuits technology
    Franzon, Paul
    Nackashi, David
    Amsinck, Christian
    DiSpigna, Neil
    Sonkusale, Sachin
    VLSI-SOC: FROM SYSTEMS TO SILICON, 2007, 240 : 1 - +
  • [5] Materials and Devices for Organic Electronics
    Reyes-Reyes, Marisol
    Carroll, David L.
    Blau, Werner
    Lopez-Sandoval, Roman
    JOURNAL OF NANOTECHNOLOGY, 2011, 2011
  • [6] Transient Electronics: Materials and Devices
    Fu, Kun Kelvin
    Wang, Zhengyang
    Dai, Jiaqi
    Carter, Marcus
    Hu, Liangbing
    CHEMISTRY OF MATERIALS, 2016, 28 (11) : 3527 - 3539
  • [7] Neuromorphic Devices, Circuits, and Their Applications in Flexible Electronics
    Wang, Feiyu
    Zhang, Tongju
    Dou, Chunmeng
    Shi, Yi
    Pan, Lijia
    IEEE Journal on Flexible Electronics, 2024, 3 (01): : 42 - 56
  • [8] Dielectric materials, devices, and circuits
    Fiedziuszko, SJ
    Hunter, IC
    Itoh, T
    Kobayashi, Y
    Nishikawa, T
    Stitzer, SN
    Wakino, K
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (03) : 706 - 720
  • [9] Advanced Materials and Devices for Bioresorbable Electronics
    Kang, Seung-Kyun
    Koo, Jahyun
    Lee, Yoon Kyeung
    Rogers, John A.
    ACCOUNTS OF CHEMICAL RESEARCH, 2018, 51 (05) : 988 - 998
  • [10] Stretchable Electronics: Materials Strategies and Devices
    Kim, Dae-Hyeong
    Rogers, John A.
    ADVANCED MATERIALS, 2008, 20 (24) : 4887 - 4892