Photostability of pulsed-laser-deposited AsxTe100-x (x=40, 50, 60) amorphous thin films

被引：6
|
作者：
Hawlova, Petra [1 ]
Bouska, Marek [1 ]
Nazabal, Virginie [1 ,2 ]
Baudet, Emeline [1 ]
Cernosek, Zdenek [3 ]
Nemec, Petr [1 ]
机构：
[1] Univ Pardubice, Fac Chem Technol, Dept Graph Arts & Photophys, Pardubice 53210, Czech Republic
[2] Univ Rennes 1, Equipe Verres & Ceram, UMR CNRS 6226, Inst Sci Chim Rennes, F-35042 Rennes, France
[3] Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Pardubice 53210, Czech Republic
来源：
OPTICS LETTERS | 2017年 / 42卷 / 09期
关键词：
INFRARED-TRANSMITTING GLASSES; PHASE-CHANGE MATERIALS; AS-TE SYSTEM; FORMING ABILITY; GE-TE; CHALCOGENIDE; ORDER;
D O I：
10.1364/OL.42.001660
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
AsxTe100-x amorphous thin films were fabricated by a pulsed laser deposition technique with the aim of finding photostable layers in as-deposited but preferably in relaxed (annealed) state. Photostability was studied in terms of the films' stability of refractive index and bandgap under nearbandgap light irradiation. As40Te60 and As50Te50 layers were found to be photostable in both as-deposited as well as relaxed states. Moreover, As50Te50 layers present the lowest surface roughness. These characteristics make pulsed-laser-deposited As50Te50 thin films promising for applications in nonlinear optics. (C) 2017 Optical Society of America
引用
收藏
页码：1660 / 1663
页数：4
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