Recent emission channeling studies in wide band gap semiconductors

被引：9
|
作者：
Wahl, U
Correia, JG
Rita, E
Alves, E
Soares, JC
De Vries, B
Matias, V
Vantomme, A
机构：
[1] Inst Tecnol & Nucl, Dept Fis, P-2686953 Sacavem, Portugal
[2] Univ Lisbon, Ctr Fis Nucl, P-1649003 Lisbon, Portugal
[3] CERN PH, CH-1211 Geneva 23, Switzerland
[4] Inst Kern & Stralingsfys, B-3001 Louvain, Belgium
来源：
HYPERFINE INTERACTIONS | 2004年 / 159卷 / 1-4期
关键词：
Fe doping; implantation; lattice location; rare earths; semiconductors;
D O I：
10.1007/s10751-005-9125-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.
引用
收藏
页码：363 / 372
页数：10
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