2-D Roughening of SiO2 Thermally Grown on Atomically Flat Si Surface

被引：2
|
作者：
Yamabe, K. [1 ]
Ohsawa, K. [1 ]
Hayashi, Y. [1 ]
Hasunuma, R. [1 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源：
SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10 | 2009年 / 19卷 / 02期
关键词：
TOPOGRAPHY CHANGE; OXIDATION; INTERFACE; SILICON; OXYGEN;
D O I：
10.1149/1.3122107
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this study, the atomic-scale roughness and uniformity Of SiO2 thermally grown on atomically flat Si surface are investigated. The SiO2 surface roughness increases with increasing oxide thickness in the initial rapid oxidation region in the Deal-Grove model. This roughness growth can be related to re-oxidation of SiO emitted from the Si/SiO2 interface near the SiO2 surface. On tire other hand, the roughness growth is saturated in the linear rate oxidation region. It is explained that the emitted SiOs within the SiO2 are re-oxidized and the generated oxidation stress is absorbed within the film.
引用
收藏
页码：427 / 442
页数：16
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