Improved efficiency-bandwidth product of modified uni-traveling carrier photodiode structures using an undoped photo-absorption layer

被引：64
|
作者：
Jun, Dong-Hwan
Jang, Jae-Hyung
Adesida, Ilesanmi
Song, Jong-In
机构：
[1] GIST, Dept Informat & Commun, Kwangju 500712, South Korea
[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期
关键词：
uni-traveling carrier photodiode; pin photodiode; efficiency-bandwidth product;
D O I：
10.1143/JJAP.45.3475
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of undoped photo-absorption layers in modified uni-traveling carrier photodiode structures on quantum efficiency and bandwidth are reported. Modified Uni-traveling carrier photodiode structures having different undoped photo-absorption layer thicknesses were fabricated and characterized. Efficiency and bandwidth of photodiodes having an optimized undoped photoabsorption layer were larger than those of photodiodes without such a la er, which agrees well with the theoretical analysis of the dynamic behavior ofthe photodiodes using drift-diffusion model. The results indicate that both the quantum efficiency and bandwidth of the uni-traveling carrier photodiode structures can be extended by incorporating an optimized thickness of undoped photo-absorption layer.
引用
收藏
页码：3475 / 3478
页数：4
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