Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene

被引：111

作者：

Malard, L. M. ^{[1
]}

Elias, D. C. ^{[1
]}

Alves, E. S. ^{[1
]}

Pimenta, M. A. ^{[1
]}

机构：

[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.101.257401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and antisymmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.

引用

页数：4

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