A novel resonant-type GaAs SPDT switch IC with low distortion characteristics for 1.9 GHz personal handy-phone system

被引：0
|
作者：
Kawakyu, K [1 ]
Ikeda, Y [1 ]
Nagaoka, M [1 ]
Ishida, K [1 ]
Kameyama, A [1 ]
Nitta, T [1 ]
Yoshimura, M [1 ]
Kitaura, Y [1 ]
Uchitomi, N [1 ]
机构：
[1] TOSHIBA RES & DEV CTR,ULSI RES LABS,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN
来源：
1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：647 / 650
页数：4
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