A new analytical model to determine the drain-source series resistance of FOLD MOSFET

被引:8
|
作者
Kumar, A
Kalra, E
Haldar, S
Gupta, RS
机构
[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India
[2] Moti Lal Nehru Coll, Dept Phys, New Delhi 110021, India
关键词
D O I
10.1088/0268-1242/14/6/301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An analytical model to determine the intrinsic drain-source series resistance of a fully overlapped lightly doped drain (FOLD) MOSFET is presented. Considering outer and inner fringing capacitances and the depletion of the n(-) surface caused by the normal electric field from the gate, I-V characteristics, transconductance, drain conductance, channel resistance, cut-off frequency and transit time are studied. It is shown that, because of the lesser parasitic resistance of the FOLD structure, the device provides higher current driving ability than the lightly doped drain and can suppress hot carrier degradation by avoiding degradation due to the depletion of the n(-) region by electrons trapped in the sidewall. Some of the predictions of the model are verified with experimental data.
引用
收藏
页码:489 / 495
页数:7
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