Simulation of In0.52Ga0.48N solar cell using AMPS-1D

InxGa1-xN alloys feature a bandgap ranging from 0.7eV to 3.4eV, covering almost the entire solar spectrum. To optimize the efficiency and the best parameters of solar cells, numerical simulations of InxGa1-xN single junction. The simulation modeling is important and indispensable for designing and fabricating InxGa1-xN single junction. We changed the In doping and the thickness of the InxGa1-xN to determine the short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency (eta). For InxGa1-xN single junction solar cell, the Jsc, Voc, and FF have a strong dependence on the In composition. In composition is a critical parameter to determine Jsc, Voc, FF, and eta of InGaN solar cells. InxGa1-xN Solar cell shows the maximum eta similar to 23%. The band gap of InxGa1-xN is 1.64 eV and is almost the same with AlGaAs. When the total layer thickness is greater than 500 nm, the absorption becomes saturated and the eta increases smoothly. The simulation results are congruent with this trend.