On the accuracy of the interdiffusion coefficient measurements of high-temperature binary mixtures under ISS conditions

被引:6
|
作者
Saez, Nuria [1 ]
Ruiz, Xavier [1 ,2 ]
Pallares, Jordi [3 ]
Shevtsova, Valentina [4 ]
机构
[1] Univ Rovira & Virgili, Dept Quim Fis & Inorgan, Tarragona, Spain
[2] IEEC, Barcelona, Spain
[3] Univ Rovira & Virgili, Dept Mech Engn, Tarragona, Spain
[4] ULB, MRC, EP, Dept Chem Phys, B-1050 Brussels, Belgium
来源
COMPTES RENDUS MECANIQUE | 2013年 / 341卷 / 4-5期
关键词
High-temperature binary mixtures; Photovoltaic Si; Al-Cu binary alloys; Low-gravity environments; Interdiffusion coefficient accuracy; NONLINEAR MECHANICAL SYSTEM; IVIDIL EXPERIMENT ONBOARD; DYNAMICAL BEHAVIOR; DIFFUSION; MELTS;
D O I
10.1016/j.crme.2013.02.007
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
An accelerometric record from the IVIDIL experiment (ESA Columbus module) has exhaustively been studied. The analysis involved the determination of basic statistical properties as, for instance, the auto-correlation and the power spectrum (second-order statistical analyses). Also, and taking into account the shape of the associated histograms, we address another important question, the non-Gaussian nature of the time series using the bispectrum and the bicoherence of the signals. Extrapolating the above-mentioned results, a computational model of a high-temperature shear cell has been performed. A scalar indicator has been used to quantify the accuracy of the diffusion coefficient measurements in the case of binary mixtures involving photovoltaic silicon or liquid Al-Cu binary alloys. Three different initial arrangements have been considered, the so-called interdiffusion, centred thick layer and the lateral thick layer. Results allow us to conclude that, under the conditions of the present work, the diffusion coefficient is insensitive to the environmental conditions, that is to say, accelerometric disturbances and initial shear cell arrangement. (C) 2013 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:405 / 416
页数:12
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