Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

被引：2
|
作者：
Bolshakov, A. S. [1 ]
Chaldyshev, V. V. [1 ,2 ,3 ]
Babichev, A. V. [1 ,2 ,5 ]
Kudryashov, D. A. [2 ]
Gudovskikh, A. S. [2 ,4 ]
Morozov, I. A. [2 ]
Sobolev, M. S. [2 ]
Nikitina, E. V. [2 ]
机构：
[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, Russian Acad Sci, St Petersburg 194021, Russia
[3] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia
[4] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia
[5] Connector Opt LLC, St Petersburg 194292, Russia
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
REFLECTION; SPECTRA;
D O I：
10.1134/S1063782615110044
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected.
引用
收藏
页码：1400 / 1404
页数：5
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