Photoluminescence, open circuit voltage, and photocurrents in Cu(In,Ga)Se2 solar cells with lateral submicron resolution

被引:10
|
作者
Juergens, T. [1 ]
Guetay, L. [1 ]
Bauer, G. H. [1 ]
机构
[1] Carl Von Ossietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germany
关键词
Cu(In; Ga)Se-2; confocal microscopy; luminescence; photocurrents; lateral inhomogeneities;
D O I
10.1016/j.tsf.2005.11.065
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin film Cu(In,Ga)Se-2 solar cells with average efficiencies in the 14% regime have been analyzed by photoluminescence (PL) with lateral micrometer-resolution. PL has been evaluated according to Planck's generalized law with respect to splitting of quasi-Fermi levels under open circuit (OC) and short circuit (SC). Lateral patterns of luminescence yields signalize local fluctuations in quasi-Fermi energies in the range of some tens of milli-electron-volt. These patterns spatially extend to some microns and by far exceed the size of individual grains of 1 mu m or less. The responses of PL, and thus the local V-OC and short circuit currents turn out to be significantly anti-correlated. This behaviour is explained in terms of a two dimensional network coupling illuminated and dark hypothetic micrometer-sized diodes with different characteristic parameters such as series and parallel resistances, as well as reverse saturation currents. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:678 / 683
页数:6
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