Growth-related structural defects in seeded sublimation-grown SiC

被引：18
|
作者：
Tuominen, M
Yakimova, R
Prieur, E
Ellison, A
Tuomi, T
Vehanen, A
Janzen, E
机构：
[1] OUTOKUMPU SEMITRON AB, S-16111 BROMMA, SWEDEN
[2] EUROPEAN SYNCHROTRON RADIAT FACIL, F-38043 GRENOBLE, FRANCE
[3] HELSINKI UNIV TECHNOL, OPTOELECT LABS, FIN-02150 ESPOO, FINLAND
[4] OKMET LTD, FIN-02631 ESPOO, FINLAND
来源：
DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 10期
关键词：
4H SiC; 6H SiC; sublimation; synchrotron X-ray photography;
D O I：
10.1016/S0925-9635(97)00096-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Structural defects in 4H and 6H SiC wafers have been studied by means of synchrotron X-ray topography and optical microscopy. The effect of seed crystal attachment, orientation, growth face shape, reloading and continued growth are discussed. A comparison between 4H and 6H material is made also. The results relate the origin of different defects to the mentioned growth conditions. (C) 1997 Elsevier Science S,A.
引用
收藏
页码：1272 / 1275
页数：4
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