Investigation of DC, RF and Linearity Performances of III-V Semiconductor-Based Electrically Doped TFET for Mixed Signal Applications

The aim of this paper is to bring forward a novel hetero-material electrically doped (ED) GAA TFET for high-performing and power efficient mixed signal applications. A number of low and high band gap III-V semiconductors were considered at source and drain channel regions, and their electrical characteristics were compared to identify the best alternative. To that end, DC/RF/linearity properties of AlGaSb/GaAsP, Ge/GaAs, Si/GaAs, Si/Ge, Silicon and SiGe/Si based ED GAA TFETs were analyzed. We found that the AlGaSb/GaAs-ED-TFET provides 16 mu A ON current at 25 mV/decade subthreshold swing and 1e13 I-ON/I-OFF ratio with exceptional analog and linearity characteristics. Also, we found that interface trap charges (ITC) in AlGaSb/GaAs-ED-TFET present negligible impact and have no effect on system performance. Further, improvisation is possible through mole fraction optimization of AlxGa1-xSb. Finally, the mixed signal components that are widely available in system architectures are implemented using AlGaSb/GaAs-ED-TFET and their performance criteria are measured. All device simulations were performed using the TCAD Silvaco tool, and look-up based Verilog-A technique was used for circuit simulation in Cadence.