Red to Near-Infrared Emission from InGaN/GaN Quantum-Disks-in-Nanowires LED

被引：0

作者：

Ng, Tien Khee ^{[1
]}

Zhao, Chao ^{[1
,2
]}

Shen, Chao ^{[1
]}

Jahangir, Shafat ^{[3
]}

Janjua, Bilal ^{[1
]}

Ben Slimane, Ahmed ^{[1
]}

Kang, Chun Hong ^{[1
]}

Syed, Ahad A. ^{[2
]}

Li, Jingqi ^{[2
]}

Alyamani, Ahmed Y. ^{[4
]}

El-Desouki, Munir M. ^{[4
]}

Bhattacharya, Pallab ^{[3
]}

Ooi, Boon S. ^{[1
]}

机构：

[1] KAUST, Photon Lab, Thuwal 21534, Saudi Arabia

[2] KAUST, Adv Nanofabricat & Imaging Core Lab, Thuwal 21534, Saudi Arabia

[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[4] KACST, Natl Ctr Nanotechnol, Riyadh 11442, Saudi Arabia

来源：

2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at similar to 830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

引用

页数：2

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