A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrication of hp45 LOP devices

被引：0

作者：

Inumiya, S ^{[1
]}

Akasaka, Y ^{[1
]}

Matsuki, T ^{[1
]}

Ootsuka, F ^{[1
]}

Torii, K ^{[1
]}

Nara, Y ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc Selete, Tsukuba, Ibaraki 3058569, Japan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm(2)/Vs @ 0.8MV/cm (86% of thermal SiO2), even after spike annealing at 1000 degrees C. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial layer growth due to recoiled oxygen had been successfully suppressed.

引用

页码：27 / 30

页数：4