Effect of sputtering power on properties of W-doped ZnO thin film transistors

In order to improve the electrical and optical properties of thin film transistors(TFTs), the tungsten-doped ZnO thin films(WZO) were deposited on p-type silicon substrates by RF magnetron sputtering,and the thin film transistors (TFTs) were fabricated. The effects of sputtering power of tungsten (W) on the electrical and optical properties of WZO thin film transistors were investigated. The results show that the sputtering power of W affects the crystallization quality of the films. With the increase of the sputtering power of W, the crystalline quality of the films is gradually improved, and when the sputtering power of W reaches a certain value, the crystalline quality of the films is not greatly improved. The WZO films studied in this paper were grown on (002) crystal plane. When the sputtering power of W is 2 W,the comprehensive properties of WZO thin film transistors are the best, the switching ratio is 5.24x10(5), the threshold voltage is 16. 89 V, and the average transmissivity is 90% between 400 nm and 1 400 nm.