Humidity-induced synaptic plasticity of ZnO artificial synapses using peptide insulator for neuromorphic computing

被引:16
|
作者
Song, Min-Kyu [1 ]
Lee, Hojung [1 ]
Yoon, Jeong Hyun [1 ]
Song, Young-Woong [1 ]
Namgung, Seok Daniel [2 ,3 ]
Sung, Taehoon [1 ]
Lee, Yoon-Sik [4 ]
Lee, Jong-Seok [1 ]
Nam, Ki Tae [2 ,3 ]
Kwon, Jang-Yeon [1 ]
机构
[1] Yonsei Univ, Sch Integrated Technol, 85 Songdogwahak Ro, Incheon 21983, South Korea
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[3] Seoul Natl Univ, Soft Foundry, Seoul 08826, South Korea
[4] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 08826, South Korea
基金
新加坡国家研究基金会;
关键词
Artificial synapse; Neuromorphic computing; Oxide semiconductor; Proton conductor; Artificial neural network; TRANSISTORS; MEMORY; NETWORK; MECHANISMS;
D O I
10.1016/j.jmst.2021.12.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Neuromorphic devices inspired by the human brain have attracted significant attention because of their excellent ability for cognitive and parallel computing. This study presents ZnO-based artificial synapses with peptide insulators for the electrical emulation of biological synapses. We demonstrated the dynamic responses of the device under various environmental conditions. The proton-conducting property of the tyrosine-rich peptide enables time-dependent responses under ambient conditions such that various aspects of synaptic behaviors are emulated by the devices. The transition from short-term memory to longterm memory is achieved via electrochemical doping of ZnO by protons. Furthermore, we demonstrate an image classification simulation using a multi-layer perceptron model to evaluate the potential of the device for use in neuromorphic computing. The neural network based on our device achieved a recognition accuracy of 87.47% for the MNIST handwritten digit images. This work proposes a novel device platform inspired by biosystems for brain-mimetic hardware systems. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
引用
收藏
页码:150 / 155
页数:6
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