Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

被引：14

作者：

Taboada, A. G. ^{[1
]}

Sanchez, A. M. ^{[2
]}

Beltran, A. M. ^{[3
,4
]}

Bozkurt, M. ^{[5
]}

Alonso-Alvarez, D. ^{[1
]}

Alen, B. ^{[1
]}

Rivera, A. ^{[1
]}

Ripalda, J. M. ^{[1
]}

Llorens, J. M. ^{[1
]}

Martin-Sanchez, J. ^{[1
]}

Gonzalez, Y. ^{[1
]}

Ulloa, J. M. ^{[5
]}

Garcia, J. M. ^{[1
,6
]}

Molina, S. I. ^{[3
,4
]}

Koenraad, P. M. ^{[5
]}

机构：

[1] CSIC, CNM, Inst Microelect Madrid, PTM, Madrid 28760, Spain

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] Univ Cadiz, Fac Ciencias, Dept Ciencia Mat, Cadiz 11510, Spain

[4] Univ Cadiz, Fac Ciencias, IM & QI, Cadiz 11510, Spain

[5] Eindhoven Univ Technol, Dept Appl Phys, COBRA Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands

[6] Columbia Univ, Dept Phys, New York, NY 10027 USA

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 23期

关键词：

WAVELENGTH LIGHT-EMISSION; STRAIN RELAXATION; SURFACE STRESS; INAS; GAASSB; GROWTH; LASERS;

D O I：

10.1103/PhysRevB.82.235316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present experimental evidence of Sb incorporation inside InAs/GaAs (001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 mu m accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

引用

页数：9

共 50 条

[1] Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots
Takahasi, Masamitu
Fujikawa, Seiji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[2] Strain and optical transitions in InAs quantum dots on (001) GaAs
Fu, Y
Zhao, QX
Ferdos, F
Sadeghi, M
Wang, SM
Larsson, A
SUPERLATTICES AND MICROSTRUCTURES, 2001, 30 (04) : 205 - 213
[3] Grazing incidence structural characterization of InAs quantum dots on GaAs(001)
Zhang, K
Heyn, C
Hansen, W
Schmidt, T
Falta, J
APPLIED SURFACE SCIENCE, 2001, 175 : 606 - 612
[4] On the location of InAs quantum dots on GaAs(001)
Xu, MC
Temko, Y
Suzuki, T
Jacobi, K
SURFACE SCIENCE, 2005, 589 (1-3) : 91 - 97
[5] Antimony incorporation in InAs quantum dots grown on GaAs substrate by molecular beam epitaxy
Rihani, J.
Sallet, V.
Christophe, Ht
Oueslati, M.
Chtourou, R.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (03): : 550 - 555
[6] Incorporation of sb in InAs/GaAs quantum dots
Molina, S. I.
Sanchez, A. M.
Beltran, A. M.
Sales, D. L.
Ben, T.
Chisholm, M. F.
Varela, M.
Pennycook, S. J.
Galindo, P. L.
Papworth, A. J.
Goodhew, P. J.
Ripalda, J. M.
APPLIED PHYSICS LETTERS, 2007, 91 (26)
[7] Physical origin of InAs quantum dots on GaAs(001)
Appl Phys Lett, 7 (783):
[8] The physical origin of InAs quantum dots on GaAs(001)
Bottomley, DJ
APPLIED PHYSICS LETTERS, 1998, 72 (07) : 783 - 785
[9] Shape transition of InAs quantum dots on GaAs(001)
Jacobi, K. (jacobi@fhi-berlin.mpg.de), 1600, American Institute of Physics Inc. (98):
[10] Shape transition of InAs quantum dots on GaAs(001)
Xu, MC
Temko, Y
Suzuki, T
Jacobi, K
JOURNAL OF APPLIED PHYSICS, 2005, 98 (08)

← 1 2 3 4 5 →