Liquid-Phase Quasi-Epitaxial Growth of Highly Stable, Monolithic UiO-66-NH2 MOF thin Films on Solid Substrates

被引：2
|
作者：
Hashem, Tawheed
Valadez Sanchez, Elvia P.
Gliemann, Hartmut
Alkordi, Mohamed H.
Woll, Christof
机构：
[1] Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen
[2] Institute for Micro Process Engineering (IMVT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen
[3] Center for Materials Science, Zewail City of Science and Technology October Gardens, 6th of October, Giza
来源：
CHEMISTRYOPEN | 2020年 / 9卷 / 05期
关键词：
metal-organic frameworks; liquid-phase separation; thin films; porous materials; UiO-66-NH2 supported thin films;
D O I：
10.1002/open.202000085
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
High quality, monolithic UiO-66-NH2 thin films on diverse solid substrates have been prepared via a low temperature liquid phase epitaxy method. The achievement of continuous films with low defect densities and great stability against high temperatures and hot water is proven, clearly outperforming other reported types of MOF thin films. © 2020 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.
引用
收藏
页码：523 / 523
页数：1
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