2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

被引:73
|
作者
Katiyar, Ajit Kumar [1 ]
Hoang, Anh Tuan [1 ]
Xu, Duo [1 ]
Hong, Juyeong [1 ]
Kim, Beom Jin [1 ]
Ji, Seunghyeon [1 ]
Ahn, Jong-Hyun [1 ]
机构
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea
基金
新加坡国家研究基金会;
关键词
HEXAGONAL BORON-NITRIDE; TRANSITION-METAL DICHALCOGENIDES; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; CHEMICAL-VAPOR-DEPOSITION; SINGLE-LAYER GRAPHENE; LARGE-SCALE PRODUCTION; HIGH-YIELD PRODUCTION; GEL GATE DIELECTRICS;
D O I
10.1021/acs.chemrev.3c00302
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
引用
收藏
页码:318 / 419
页数:102
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