Spatio-Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

被引：6
|
作者：
Schoen, Daniel [1 ]
Menzel, Stephan [1 ]
机构：
[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 7, D-52425 Julich, Germany
来源：
ADVANCED FUNCTIONAL MATERIALS | 2023年 / 33卷 / 22期
关键词：
memristive crossbar arrays; thermal crosstalks; thermal responses; neuromorphic computing applications; valence change memory; finite element model; EMULATING SHORT-TERM; RESISTIVE MEMORY; SIMULATION; DEVICES;
D O I：
10.1002/adfm.202213943
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Memristive valence change memory (VCM) cells show a strong non-linearity in the switching kinetics which is induced by a temperature increase. In this respect, thermal crosstalk can be observed in highly integrated crossbar arrays which may impact the resistance state of adjacent devices. Additionally, due to the thermal capacitance, a VCM cell can remain thermally active after a pulse and thus influence the temperature conditions for a possible subsequent pulse. By using a finite element model of a crossbar array, it is shown that spatio-temporal thermal correlations can occur and are capable of affecting the resistive state of adjacent cells. This new functional behavior can potentially be used for future neuromorphic computing applications.
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页数：12
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