Enhancing the Emission Rate of the Inherent Silicon-Vacancy Center Using Optimized Multipolar Moments in a Silicon Carbide Metasurface

Silicon carbide (SiC) hosts various color centers with emission lines from visible to near-infrared, with promising applications in quantum communication. Metasurfaces made using SiC can enhance the emission rate of inherent color centers to achieve on-demand single photon emission with a high emission rate. This is possible by engineering the amplitude and phase of the excited multipolar scattering moments in metasurfaces. The numerical simulations and analytical calculations are used to study the emission rate enhancement from an embedded single silicon vacancy (V-Si(-)) center in SiC metasurface. The optimized metasurface balances multipolar moments at the zero-phonon line wavelength of 862 nm with 40 times field intensity confinement. The confinement provides substantial emission rate enhancement for the V-Si(-) center, making it a bright single photon emitter at 862 nm. The significant emission enhancement offers new insights into the metasurface to achieve on-demand single-photon sources and efficient spin-photon interfaces. Manipulating the quantum states of a single emitter using metasurfaces is envisioned to revolutionize quantum technology. The generation of bright single photon emission is reported with an enhanced emission rate from a single silicon-vacancy center in a SiC metasurface by balancing the multi-polar moments at the zero-phonon line wavelength of 862 nm, which is useful for an efficient spin-photon interface.image