Graphene edge interference improves single-molecule transistors

被引：0
|
作者：
Vazquez, Hector [1 ]
机构：
[1] Czech Acad Sci, Inst Phys, Prague, Czech Republic
来源：
NATURE NANOTECHNOLOGY | 2024年 / 19卷 / 06期
关键词：
D O I：
10.1038/s41565-024-01634-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The performance of three-terminal molecular transistors is enhanced through the harnessing of quantum interference in the edges of graphene electrodes.
引用
收藏
页码：718 / 720
页数：3
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